Growth control of GaAs epilayers with specular surface, free of superficial pyramid-shape features and bulk twins, is achieved on a nonmisoriented GaAs(111)B substrate via in situ, real time measurement of specular beam intensity of reflection high-energy electron diffraction (RHEED). Regimes of growth conditions are identified in terms of the static surface phase diagram and the temporal RHEED intensity behavior during growth, thus affording the possibility to realize a reproducible control independent of growth systems.
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Chen et al. (1991) studied this question.
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