AlGaAs layers with a featureless specular surface morphology were grown successfully on an exactly (111)B oriented GaAs substrate by migration-enhanced epitaxy (MEE) even at growth temperatures below 500 °C. We have also observed reflection high-energy electron diffraction (RHEED) intensity oscillation of AlGaAs on a (111)B oriented substrate by MEE. The single quantum well (SQW) is prepared by MEE on a (111)B and a (100) substrate simultaneously, and the photoluminescence intensity from (111) SQW is shown to be about 50 times higher than that from (100) SQW.
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Imamoto et al. (1989) studied this question.
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