A low-parasitic-capacitance beam-lead Schottky diode has been developed for millimetre-wavelength mixer applications from 30–110 GHz. It has a novel structure that incorporates a polyimide film to support the beam leads and the GaAs active area. Typical devices have an ideality factor of 1.12, a parasitic capacitance of 10 fF, a zero-bias-junction capacitance of 20 fF, a series resistance of 2.5 Ω, and hence a figure of merit cutoff frequency of over 3 THz. Diodes tested in production mixers at 36 GHz have yielded a conversion loss of 5.14 dB. The devices, fabricated by repeatable production techniques, are mechanically rugged and suitable for qualification to space and defence standards.
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Huang et al. (1991) studied this question.
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