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Scanning tunneling spectroscopy has been used to study quantum size effects on the electronic structure of InAs and In0.46Ga0.54As quantum dots (QDs) in correlation with their morphologies. It is found that for both samples, the measured band gap increases with decreasing dot height. The observed height dependence of the gap energy has been well reproduced by the calculation based on a one-dimensional quantum well model. For the In0.46Ga0.54As QD, however, enrichment of In-composition in the dot compared to the nominal composition has been observed.
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Yamauchi et al. (2001) studied this question.
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