The Cr 1+ level in GaAs (the so-called two-electron trap level) is investigated using optical absorption and de Haas-Shubnikov measurements for a series of heavily doped n-type samples with Fermi levels up to 120 meV above the conduction band edge. The level is shown to have the form of a broadened distribution of width 26 meV centred at 45 meV (4K) above the band edge. Analogues with intermediate-valence and Kondo systems are briefly discussed.
No takes yet. Share an insight, caveat, or question.
Guimãraes et al. (1985) studied this question.
Synapse has enriched 5 related papers. Consider them for comparative context: