The Change in Electron Mobility in Indium Antimonide at Low Electric Field

The change in electron mobility in indium antimonide at low electric field is measured by the bridge method at 77, 201 and 297°K. At 77°K the electron mobility decreases with increasing electric field in rather pure indium antimonide, but increases in impure one. At 201 and 298°K the change in electron mobility is too small to be detected. The effect of transverse magnetic field upon the change in electron mobility is also measured. In a transverse magnetic field, the electron mobility in indium antimonide increases with increasing electric field at 77°K, while it decreases at 201°K. At 297°K, the change in electron mobility in a transverse magnetic field is also too small to be measured. To explain the experimental results mentioned above, some considerations are made on the scattering mechanism of conduction electron in indium antimonide. Then it is concluded that polar scattering is the most important in indium antimonide in the temperature range from 77°K to about 300°K, and also that the impurity scattering plays an important role in our samples at 77°K and acoustic scattering does some contributions at 201°K.