We report the first ultrafast all-optical switching using low-temperature-grown bulk semiconductor material (LT-GaAs) in a compact asymmetric Fabry-Perot device. We obtain 3-ps response times, 2.8-dB insertion loss, 40-nm bandwidth, and 15-dB contrast ratios using 200-fJ/μm2average switching energy flux.
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Loka et al. (1998) studied this question.
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