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A new stacking fault formation mechanism has been observed for the first time in ZnO/LiTaO(3) heteroepitaxial films. High resolution electron microscopy studies combined with electron diffraction and numerical image computation suggest that the observed type I1 intrinsic stacking faults in an epitaxial film can be dominantly formed as a result of tilting of the lattices between films and substrate required to maintain a particular orientation relationship.
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Lim et al. (2001) studied this question.
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