The first observation of electro-absorption in a InGaAsN-GaAs single quantum well pin-diode structure is reported. Clear excitonic resonances were observed at room temperature at 1150 nm and a strong Stark shift is obtained for applied fields of up to 2.6×107 V/m. The field induced changes in refractive index were calculated at 1300 and 1550 nm and it is concluded that low voltage phase modulators could be fabricated using this material.
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Jalili et al. (2002) studied this question.
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