Ammonolysis of polycrystalline and amorphized gallium arsenide GaAs to polytype-specific nanopowders of gallium nitride GaN

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Single-step N-for-As metathesis reactions of gallium arsenide GaAs with ammonia NH 3 at temperatures in the range 650–950 °C for 6–90 hours afforded high yields of pure nanocrystalline powders of the wide bandgap semiconductor gallium nitride GaN.