Gettering of Cr during the growth of silicon sheets from a Cr-doped melt is observed when the solid/liquid interface region is exposed to CO or CO2 gases. The gettering occurs within a region about 1-μm wide at the surface of the crystal, where a large accumulation of carbon and oxygen is detected. Mechanisms for carbon and oxygen participation in forming gettering sites for Cr are examined.
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Pivac et al. (1993) studied this question.
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