We studied interaction of molten silicon at the meniscus surface with CO and CO2 gas added to an inert argon atmosphere during the growth of edge-defined film-fed growth polycrystalline silicon nonagons. Both gases caused a significant increase in carbon content of the nonagons. However, most carbon remained trapped in the layer close to the surface and made a SiC-like contribution to the infrared spectrum. In addition, CO2 gas caused enhanced surface oxidation (with respect to CO gas).
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Pivac et al. (1991) studied this question.
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