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We report the preparation of SiO 2 -embedded silicon nanocrystals (Si-NCs) from the thermal processing of sol−gel polymers derived from trichlorosilane (HSiCl 3 ). Straightforward addition of water to HSiCl 3 generates a cross-linked (HSiO 1.5 ) n sol−gel polymer suitable for the generation of bulk quantities of SiO 2 -embedded Si-NCs. It is shown that structural differences between the present (HSiO 1.5 ) n polymer and hydrogen silsesquioxane (HSQ) result in controllable differences in the resulting oxide-embedded Si-NCs produced from these precursors. A polymer structure/NC size relationship is further delineated through the preparation and evaluation of methyl-modified (HSiO 1.5 ) n (CH 3 SiO 1.5 ) m ( m ≪ n, m + n = 1) sol−gel copolymers, in which a low concentration of methyl groups acts as a polymer network modifier and influences the formation of Si-NCs during thermal processing. Si-NC size is readily tailored by controlled variations to peak processing temperature for (HSiO 1.5 ) n and composition ( n and m ) for (HSiO 1.5 ) n (CH 3 SiO 1.5 ) m . Furthermore, the present Si-NCs exhibit size-dependent photoluminescence (PL) in accordance with the principles of quantum confinement. Freestanding Si-NCs are obtained through chemical etching of the oxide matrix and exhibit tunable PL throughout the visible spectrum.
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Henderson et al. (2009) studied this question.
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