Oxygen striations in Czochralski-grown silicon crystals have been directly observed by applying the scanning IR absorption technique to longitudinal sections. The oxygen striations were found to correlate clearly with thermally-induced-microdefect distributions. The results show that oxygen plays a very important role in microdefect formation. A critical oxygen concentration for microdefect introduction was estimated to be (7–8)×1017 cm−3 for 96-h, 600 °C heat treatment.
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Ohsawa et al. (1980) studied this question.
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