Experiments show that the layer of separate confinement heterostructure (SCH) has a significant influence on the emission spectrum of superluminescent diodes (SLDs)/semiconductor optical amplifiers (SOAs). Reducing the thickness of SCH layer at the p-side could improve the uniformity of carrier distribution among multiple quantum wells (MQWs). With three In/sub 0.67/Ga/sub 0.33/As/sub 0.72/P/sub 0.28/ QWs near the p-side and two In/sub 0.53/Ga/sub 0.47/As QWs near the n-side, when the thickness of the SCH layer changes from 120 to 30 nm, the operation current for SLDs/SOAs to exhibit the full-width at half-maximum spectral width of above 270 nm could be reduced from 500 to 160 mA.
No takes yet. Share an insight, caveat, or question.
Lin et al. (2004) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: