Depth profiles of interstitial halogen defects in high-energy ion-bombarded RbI by micro-Raman spectroscopy

Micro-Raman spectroscopy has been used to measure the depth profiles of halogen aggregates in both x-irradiated and ion-bombarded RbI. In experiments using argon ions of energy 13.6 MeV/A, it is shown that the Iₙ^- clusters are significantly enhanced in the region of large excitation density near the maximum in electronic energy loss at the expense of the I₃^- defects. The investigations of fluence dependence show that the number of I₃^- defects is progressively enhanced with increasing fluence at all depths within the damaged region. The results are examined in the light of current theoretical models of ion-beam interactions with alkali halides. {} 1996 The American Physical Society.