Growth of Short-Period ZnSe-ZnSxSe1-x Strained-Layer Superlattices by Metalorganic Molecular Beam Epitaxy

We report on metalorganic molecular beam epitaxial (MOMBE) growth of short-period ZnSe-ZnS x Se1-x strained-layer superlattices (SLSs), in which special attention has been paid to in situ monitorring of the growth by reflection high-energy electron diffraction (RHEED). GaAs (001) wafer, which was employed as the substrate, was pretreated with (NH4)2S x solution; this pretreatment was found to be favorable for layer-by-layer growth of the constituent layers. The superlattice structures obtained here were characterized by X-ray diffraction and photoluminescence measurements, suggesting formation of well-defined SLSs in spite of the short periods in the structures.