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The bound exciton spectra of ZnSe crystals at 4.2 °K were measured following the heat treatment of the samples in Zn or Se. As a result of Se treatment only the I1 line with the binding energy 19 meV is observed, whereas after Zn treatment a new I*2 line with the binding energy 2 meV appears. These final states are reversible and the lines are ascribed to the intrinsic defects V and V, respectively.
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Röppischer et al. (1975) studied this question.
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