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April 1, 1963Physical Review

Carrier Mobility and Shallow Impurity States in ZnSe and ZnTe

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Authors

MAM. AvenGeneral Electric (United States)BSB. SegallCase Western Reserve University

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Implication

Experimental analysis reveals shallow impurity energy levels and phonon scattering dominance in ZnSe and ZnTe crystals, indicating fundamental limits on semiconductor carrier transport.

Key Points

  • To identify shallow impurity energy states and analyze the scattering mechanisms that govern carrier mobility in p-type ZnTe and n-type ZnSe.
  • Conducted electrical transport measurements on undoped and doped p-type ZnTe crystals (doped with Cu, Ag, or Au) and n-type ZnSe crystals.
  • Evaluated lattice mobility constraints by modeling polar and nonpolar optical phonon scattering interactions.
  • ZnTe doping produced discrete acceptor levels at 0.15 eV (Cu), 0.11 eV (Ag), and 0.22 eV (Au), with undoped crystals showing an intrinsic Zn vacancy acceptor level at 0.048 eV.
  • n-type ZnSe exhibited a shallow donor level roughly 0.01 eV below the conduction band and supported degenerate carrier states.
  • Polar interactions with longitudinal optical phonons dominated electron scattering in ZnSe and represented the primary scattering mechanism for holes in ZnTe.

Cite This Study

Aven et al. (1963) studied this question.

synapsesocial.com/papers/6a70dc5a6ceb2bbd16e00549https://doi.org/10.1103/physrev.130.81
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