What question did this study set out to answer?

To investigate the influence of doubly charged impurity centers on charge carrier mobility and determine scattering cross sections in germanium crystals.

May 1, 1956Physical Review

Scattering of Carriers from Doubly Charged Impurity Sites in Germanium

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Authors

WTW. W. TylerGeneral Electric (United States)HWH. H. WoodburyCalifornia Institute of Technology

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Implication

Experimental study reveals carrier mobility increases in impurity-doped germanium, indicating a quadratic charge dependence in carrier scattering cross sections.

Key Points

To investigate the influence of doubly charged impurity centers on charge carrier mobility and determine scattering cross sections in germanium crystals.
Conducted equilibrium mobility measurements on zinc-doped germanium crystals with acceptor levels at approximately 0.03 eV and 0.09 eV from the valence band.
Performed high-level photoconductivity experiments on n-type germanium crystals doped with iron, nickel, manganese, or zinc impurities compensated to doubly negative charge states.
The scattering cross section for holes interacting with doubly charged zinc sites was approximately four times greater than that for singly charged gallium sites, confirming a Z^2 charge dependence.
Under intense illumination, steady-state free electron concentration and mobility increased simultaneously due to trapped holes reducing the impurity charge state from two units to one.
At hole trapping saturation in iron- and manganese-doped samples, trapped hole concentrations matched the known double-acceptor impurity concentrations.

Cite This Study

Tyler et al. (1956) studied this question.

synapsesocial.com/papers/6a82a8bbabc87fc4bf1e15aa https://doi.org/10.1103/physrev.102.647

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May 1, 1956Physical Review

Scattering of Carriers from Doubly Charged Impurity Sites in Germanium

View Full Paper

Ask AI

Bookmark

Authors

WTW. W. TylerGeneral Electric (United States)HWH. H. WoodburyCalifornia Institute of Technology

Discussion

Member takes

Implication

Experimental study reveals carrier mobility increases in impurity-doped germanium, indicating a quadratic charge dependence in carrier scattering cross sections.

Key Points

To investigate the influence of doubly charged impurity centers on charge carrier mobility and determine scattering cross sections in germanium crystals.
Conducted equilibrium mobility measurements on zinc-doped germanium crystals with acceptor levels at approximately 0.03 eV and 0.09 eV from the valence band.
Performed high-level photoconductivity experiments on n-type germanium crystals doped with iron, nickel, manganese, or zinc impurities compensated to doubly negative charge states.
The scattering cross section for holes interacting with doubly charged zinc sites was approximately four times greater than that for singly charged gallium sites, confirming a Z^2 charge dependence.
Under intense illumination, steady-state free electron concentration and mobility increased simultaneously due to trapped holes reducing the impurity charge state from two units to one.
At hole trapping saturation in iron- and manganese-doped samples, trapped hole concentrations matched the known double-acceptor impurity concentrations.

Cite This Study

Tyler et al. (1956) studied this question.

synapsesocial.com/papers/6a82a8bbabc87fc4bf1e15aa https://doi.org/10.1103/physrev.102.647

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