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December 11, 2025Scientific ReportsOpen Access

First-Principles insights into group-V impurities and their impact on germanium detector performance

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Authors

SASandip AryalLos Alamos National LaboratoryEBEnrique R. BatistaLos Alamos National LaboratoryGWGaoxue WangLos Alamos National Laboratory

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Implication

This work demonstrates how group-V impurities affect charge trapping in germanium detectors, suggesting potential improvements.

Key Points

  • This research aims to investigate the impact of group-V impurities on the performance of germanium detectors.
  • Utilized density functional theory to analyze point defects in Ge.
  • Examined the energetics of group-V impurities and their interactions with vacancies.
  • Analyzed charge trapping effects related to different dopants.
  • Group-V impurities, like P, form shallow traps close to the conduction band edge of Ge.
  • Vacancy-impurity complexes contribute to charge trapping, degrading detector performance.
  • N dopants create deep trap states, unlike P, which affects mobility differently.

Cite This Study

Aryal et al. (2025) studied this question.

synapsesocial.com/papers/69401b262d562116f28f792bhttps://doi.org/10.1038/s41598-025-25057-6
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