Crystal growth and scintillating properties of (Pr,Si)‐doped YAlO3

This paper deals with Pr‐doped and Pr, Si‐codoped YAlO3 single crystal growth by the micro‐pulling‐down method and investigation of their spectroscopic and scintillating properties. The Pr3+ 5d ‐4f radioluminescence intensity is more than 10 times higher than that of Bi4Ge3O12 standard sample, but the Si‐codoping decreases it. Absorption spectra of as‐grown and air‐annealed Si,Pr‐codoped YAlO3 samples show along with an onset of 4f ‐5d transition round 230 nm the induced absorption band at 400 nm which possibly related to a hole center absorption (Pr4+ or O‐). Thermoluminescence measurements above the room temperature were performed in order to monitor deep electron traps. Strong concentration dependence of thermoluminescence was observed for Pr:YAlO3 glow curves. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)