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Three binary nitride materials (TiN, AlN, and GaN) were prepared by reaction of a microwave generated nitrogen/hydrogen plasma with TiO2, Al(OH)3, and Ga2O3, respectively. Using this plasma, even low surface area oxide powders, which exhibit significant kinetic barriers to ammonolysis, can be cleanly converted to nitride products.
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Houmes et al. (1996) studied this question.
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