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ZnO crystals thin plate-form were grown from molten lead fluoride. The six-fold c-axis is perpendicular to the planes of the crystals. The transmission in the region of the absorption edge is investigated as a function of temperature. At wavelengths beyond one micron, the absorption coefficient α varies with λ2. The effective mass of (0.06 to 0.14)mis derived from the classical expression for free-carrier absorption. An electron affinity of 1.3 eV is deduced from the photoelectric threshold. The temperature dependence of mobility shows the presence of a large impurity scattering at low temperatures.
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Watanabe et al. (1964) studied this question.
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