Passivation of 4H-SiC/SiO2 Interface Traps by Oxidation of a Thin Silicon Nitride Layer

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The effect of the alternative nitridation process of the 4H-SiC/SiO2 interface by introduction of a thin silicon nitride layer on the electrical properties of the gate oxide has been investigated. C-V and G-V measurements on inversion-channel MOS devices revealed similar results to the conventional N2O oxidation. Higher field-effect mobility values are achieved due to lower interface roughness of the alternative nitridation process. However, insignificant degradation of the reliability was observed.