Amorphous SIN x (x≦0.6) alloys were deposited by thermal decomposition of Ar/SiH4/NH3 mixtures at 550°C, and their optical and electrical properties were investigated. The optical gap energy increased quadratically from 1.5 eV to 2.0 eV with the incorporated nitrogen atom concentration. The nitrogen incorporation caused a remarkable reduction in the hopping conduction, whereas it had little effect on the extended-state conduction. The products of quantum efficiency, mobility, and lifetime were little influenced by the nitrogen incorporation.
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Sasaki et al. (1982) studied this question.
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