GaAs is deformed to steady-state creep at temperatures between 820 K < T < 1170 K. The rate controlling recovery process turns out to be cross-slip. The microstructure corresponding to steady-state deformation is investigated by TEM. A microscopic model for steady-state deformation of GaAs is developed which includes the deformation results as well as those of TEM.
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Behrensmeier et al. (1991) studied this question.
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