Epitaxial growth of GaAs/(Ca, Sr) F2/GaAs structures by means of molecular beam epitaxy has been demonstrated. It has been shown that it was possible to grow layers with good crystalline quality and no noticeable interdiffusion at the interfaces. In addition, the uppermost GaAs layers present interesting electrical properties, exhibiting electron Hall mobilities of about 1300 cm2/Vs.
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Siskos et al. (1984) studied this question.
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