Anisotropy effects on excitonic properties in realistic quantum wells

The binding energy, lateral and vertical extension, dimensionality, and lifetime of excitons in quantum wells are calculated as a function of well width. A novel variational approach including an elliptically symmetric wave function, finite barriers, and different masses in the well and the barrier is used. Thus, for the first time the geometrical anisotropy and the anisotropy of the physical properties of the quantum well are fully considered. Numerical results are presented for Al0.40{Ga}0.60$As/GaAs and ${In}0.53Ga0.47As/InP.