A time-resolved photoluminescence study of the ‘‘damage’’ lines often observed in molecular beam epitaxial GaAs shows two recent models of the origin of these lines to be incorrect. Our results show that the p through v lines have identical transient behavior which is significantly different from that of the g line. These measurements support the general conclusion of a recent excitation spectroscopy study that the g line is due to an acceptor bound exciton, but call for a reinterpretation of several of the lines related to g which leads to a new value for the g-acceptor binding energy.
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Steiner et al. (1985) studied this question.