Measurement of the Auger recombination rate in p-type 0.54 eV GaInAsSb by time-resolved photoluminescence

Auger recombination in p-type GaSb, InAs, and their alloys is enhanced due to the proximity of the band gap energy and the energy separation to the spin split-off valence band. This can affect the device performance even at moderate doping concentration. We report electron lifetime measurements in a p-type 0.54 eV GaInAsSb alloy, commonly used in a variety of infrared devices. We have studied a series of double-capped heterostructures with varied thicknesses and doping levels, grown by organometallic vapor phase epitaxy on GaSb substrates. The Auger coefficient value of 2.3×10−28 cm6/s is determined by analyzing the photoluminescence decay constants with a systematic separation of different recombination mechanisms.