An Si on MgO · Al 2 O 3 on Si double heterostructure material for integrated circuits has been developed. The MgO · Al 2 O 3 epitaxial layer on Si was grown by using an open‐tube Al ‐ HCl ‐ MgCl 2 ‐ CO 2 ‐ H 2 vapor phase transport technique. The electron Hall mobility and the defect density of the Si active layer on epitaxially grown MgO · Al 2 O 3 were μ ̅ n = 1400 cm 2 / Vsec and 1 × 10 4 / cm 2 , respectively, when the Si thickness was 8 μm and the doping concentration was n = 2 × 10 14 / cm 3 . The growth conditions of MgO · Al 2 O 3 epitaxial layers and the characteristics of the Si active layers are presented.
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Ihara et al. (1982) studied this question.