In this study, we demonstrate in‐situ n‐doping and crosslinking of semiconducting polymers as efficient electron‐transporting materials for inverted configuration polymer solar cells. The semiconducting polymers were crosslinked with bis(perfluorophenyl) azide (bis‐PFPA) to form a robust solvent‐resistant film, thereby preventing solvent‐induced erosion during subsequent solution‐based device processing. In addition, chemical n‐doping of semiconducting polymers with (4‐(1,3‐dimethyl‐2,3‐dihydro‐1H‐benzoimidazol‐2‐yl)phenyl)dimethylamine (N‐DMBI) substantially improved the power conversion efficiency of solar cells from 0.69% to 3.42%. These results open the way for progress on generally applicable polymeric interface materials, providing not only high device performance but also an effective fabrication method for solution‐processed multilayer solar cell devices.
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Cho et al. (2011) studied this question.
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