Possibility of increased mobility in Ge-Sn alloy system

We study the effect of strain and alloying with Sn on the band structure of Ge using a combination of ab initio and empirical pseudopotential techniques. The properties calculated are used to determine the phonon and alloy scattering contributions to the mobility. Using the dependence of the mobility on strain and alloying Sn, we propose a combination of alloying and biaxial strain to enhance both the electron and hole mobilities of Ge.