Band-tail parameter modeling in semiconductor materials

An analytical formulation and modeling for determining the band-tail parameter E₀ taking into account the carrier-impurity and phonon-carrier interactions and the structural disorder is presented. An analysis of the different contributions to E₀ at low and room temperature in n- and p-type GaAs is also done. The theoretical results agree very well with experiment for noncompensated GaAs samples. The agreement was achieved in a wide range of carrier concentrations at 5 K and room temperature by adding a constant value to E₀, lower than 4.1 meV, related to the structural disorder.