The diffusion coefficient of arsenic in silicon has been investigated over the temperature range of 1100°–1350°C using the formation of p‐n junctions to determine diffusion depths and concentrations. Diffusion coefficients are in good agreement with previously published data, but the diffusion equation has a higher and activation energy. Surface concentrations of arsenic were in the 10 17 to 10 19 range.
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W. J. Armstrong (1962) studied this question.