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Electroreflectance (ER) measurements have been performed on a number of sputtered hydrogenated amorphous silicon films in the vicinity of the absorption edge. The results confirm features seen in unmodulated spectra but do not show any new details. The usefulness of ER is assessed, and a model is advanced to explain the occurrence and spectral dependence of the phenomenon in amorphous silicon.
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Freeman et al. (1980) studied this question.
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