Radiation-Induced Optical Effects in Chalcogenide Semiconductor Glasses

A variety of methodological resolutions suitable to identify unambiguously radiation-induced effects in chalcogenide glassy semiconductors is analyzed in details. The radiation-optical effects in chalcogenide glasses are comprehensively considered as resulting from both intrinsic and impurity-related redistribution of covalent chemical bonds known as destruction-polymerization transformations. Two types of experimental measuring protocols are utilized to study the radiation-induced effects within ex-situ direct or in-situ backward chronology, the latter being more adequate for correct testing of competitive inputs from both channels of destruction-polymerization transformations. A critical assessment is given on misleading speculations of some authors ignoring intrinsic radiation-structural transformations in glassy As2S3 in view of accompanying oxidation and thermally-induced physical-ageing processes. In final, the As2S3 glass is nominated to be the best model object among a wide group of chalcogenide glassy semiconductors revealing the highest sensitivity to radiation-induced metastability.