Answers are grounded in this paper and cite their sources.
Experimental study demonstrates high-fidelity single- and two-qubit logic using silicon hole spins, indicating a viable pathway for scalable quantum CMOS architectures.
Silicon spin qubits in gate-defined quantum dots leverage established semiconductor infrastructure and offer a scalable path toward transformative quantum technologies. Holes spins in silicon offer compact all-electrical control, whilst retaining the salient features of a quantum dot qubit architecture. However, silicon hole spin qubits are not as advanced as electrons, due to increased susceptibility to disorder and more complex spin physics. Here we demonstrate single-qubit gate fidelities up to 99.8% and a two-qubit gate quality factor of 240, indicating a physical fidelity limit of 99.7%. These results represent the highest performance reported in natural silicon to date, made possible by fast qubit control, exchange pulsing, and industrial-grade fabrication. Notably, we achieve these results in a near-identical device as used for highly reproducible, high-fidelity electron spin qubits. With isotopic purification and further device-level optimisations, silicon hole spin qubits are poised to unlock a new operation regime for quantum CMOS architectures.
No takes yet. Share an insight, caveat, or question.
Vorreiter et al. (2026) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: