Diffusion of Constituent Atoms in P-type a-Si:H/SnO2 Interfaces

Chemical states and impurity profiles in the p-type amorphous hydrogenerated silicon (a-Si:H)/SnO2 interface have been studied by X-ray photoelectron spectroscopy (XPS). It is found that a trace amount of reduced metallic Sn exists in a-Si:H, while molecular units such as SiO2, Si2O3, SiO and Si2O are incorporated not only in a-Si:H but also in SnO2, indicating that the mutual diffusion of silicon and oxygen in the interface takes place.