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A new surface passivation using P2S5/(NH4)2S on GaAs Schottky barrier diodes formed by Au and Al contacts was investigated, and the results were compared with those of (NH4)2Sx- and NH4OH/HF-treated devices. With new surface treatment, the effective barrier heights for both the Al- and Au-GaAs Schottky diodes were found to vary with the work function of metals, which is clear evidence of the lower surface state density in these diodes. Results of the I-V and C-V measurements show that P2S5/(NH4)2S-passivated diodes have lower reverse leakage current and higher effective barrier height than that of the (NH4)2Sx-treated diodes.
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Hwang et al. (1990) studied this question.
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