Raman spectra from InP were measured at various power densities of the exciting laser. Concentration of the optically excited excess carriers Δn calculated from the frequency of the coupled longitudinal optical phonon-plasmon mode was about 0.5–1.7×1017 cm−3 at the laser power density of 5×102 W/cm2 for InP with equilibrium carrier concentration 0.9–5×1017 cm−3. Surface recombination velocity estimated from Δn assuming that the bulk lifetime was larger than 10−7 s was 1–8×103 cm/s. Such dependence of Raman spectra on laser power density could not be observed for GaAs.
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Nakamura et al. (1984) studied this question.
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