Pt-Si alloy layers are formed during 130-nsec pulsed irradiation of Pt coated Si with light from a Nd : YAG laser. The alloys form via surface melting and resolidifaction. Laser processing of arsenic of ion implanted, p-type silicon results in formation of a p-n+/Pt-Si structure that exhibits rectifying electrical behavior. This structure arises because the As and Pt impurities are zone refined to different extents during resolidification of the molten surface layer.
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Doherty et al. (1980) studied this question.
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