Assessment of the intrinsic nature of deep levelZ1/Z2by compensation effects in proton-irradiated 4H-SiC

The present study investigates compensation phenomena induced by proton irradiation in 4H silicon carbide. The introduction of defects in the material and the compensation of charge density are modelled according to the participation of shallow dopant (N) atoms to the structure of the introduced defect. Combined analysis of in-depth capacitance–voltage (C–V) profiling and deep level transient spectroscopy (DLTS) is carried out. From the results, we conclude that deep level Z1/Z2 has an intrinsic nature, rather than being related to a nitrogen-complex.