High-purity and high-quality 4H–SiC grown at high speed by chimney-type vertical hot-wall chemical vapor deposition

4H–SiC layers have been homoepitaxially grown at a high growth rate of 25 μm/h by chimney-type vertical hot-wall chemical vapor deposition at 1700 °C. Through photoluminescence measurement, the intrinsic defect, so-called L1 peak, was found to be reduced under a C-rich condition. In the deep level transient spectroscopy measurement, the Z1 center was also found to be suppressed under a C-rich condition. For a 75-μm-thick epilayer, the net donor concentration was reduced to as low as 5×1012 cm−3. In low-temperature photoluminescence, free exciton peaks are dominant, indicating high purity of the epilayer.