Hydrogenation of gold-related levels in silicon by electrolytic doping

The deep gold-related donor and acceptor levels in silicon have been neutralized to several μm depth by introducing atomic hydrogen using an electrolytic method. Using phosphoric or sulfuric acid as the electrolyte, it is possible to dope the crystalline silicon with hydrogen at elevated temperatures (200–280 °C) allowing direct comparison with other means of introduction, such as hydrogen plasma exposure. We find the electrolytic method is not as efficient as plasma treatment for the same conditions, possibly due to oxide formation during the immersion in the acid.