Electron paramagnetic resonance (EPR) and diode capacitance measurements, including deep level transient spectroscopy (DLTS), have been used to identify the levels in the silicon band gap associated with the Au-Fe complex. Two deep levels at Ec−0.354 eV and Ev+0.434 eV were found with properties consistent with those of the complex; the role of gold in the formation of the complex was confirmed by the observation that during low-temperature annealing (<350 °C) the changes in the concentration of the center were accompanied by equal and opposite changes in the concentration of the normal gold acceptor and donor levels.
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Brotherton et al. (1984) studied this question.
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