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The implicit and explicit contributions to the temperature dependence of the absorption edge in some amorphous forms of Si, Ge, GaP, and GaAs are reported. The results are used to test a model in which the valence (conduction) band states in amorphous material are a superposition of crystalline valence (conduction) band states of about the same energy. In the case of the III–V compounds, it is concluded that such a model may be invalid owing to the probable existence of “wrong” bonds.
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N. Connell (1972) studied this question.
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