On the calculation of cyclotron masses

The formulae for calculating the whole spectrum of cyclotron masses of charge carriers in a crystal are obtained on the basis of new numerical methods in the pseudopotential scheme. To avoid the numerical differentiation of approximately calculated dispersion dependences, E=E(k), the required values are represented in the form of integrals dependent on parameters. Since the values appearing under the integral sign after differentiation are calculated directly, the accuracy of the calculation of cyclotron masses can be greatly increased. The relations obtained are illustrated by calculations of cyclotron masses in Sb, which are compared with experimental data. The existence is predicted of additional cyclotron frequencies in Sb due to the peculiarities of its Fermi surface.