New measurements are made of the EL2 defect level in liquid-encapsulated-Czochralski (LEC) grown GaAs with Si-implantation. The isothermal capacitance transient spectroscopy (ICTS) experiment is performed to capture transient in the temperature range 200 to 380 K at 1 to 2K intervals at 1 MHz frequency for seven samples. The deep level transient spectroscopy (DLTS) signals and data analysis are carried out by modulating function waveform analysis method developed for it. These results are subsequently organized to predict the density distribution of the defect level EL2 in the energy band gap.
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Bisbee et al. (1990) studied this question.
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